samwin SW634 rev0.1 04.10.1 general description thispowermosfet isproduced in chmc with advancedvdmostechnology of samwin.this technology enable power mosfet to have better characteristics,suchas fast switching time, lowon resistance,low gatecharge and especially excellent avalanche characteristics.itis mainly suitablefor half bridge orfull bridgeresonant topologylike a electronic ballast, and alsolow power switchingmode power appliances. features n-channel mosfet bv dss (minimum) r ds(on) (maximum) i d qg(typical) p d (@tc=25 ) : 250v : 0.45 ohm : 8.5 a :28nc : 72w g s d absolute maximum ratings symbol parameter value units v dss draintosourcevoltage 250 v continuousdraincurrent(@tc=25 ) 8.5 a continuousdraincurrent(@tc=100 ) 6.5 a i dm draincurrentpulsed (note1) 34 a v gs gatetosourcevoltage 30 v e as singlepulsedavalancheenergy (note2) 250 mj e ar repetitiveavalancheenergy (note1) 7.2 mj dv/dt peakdioderecoverydv/dt (note3) 5.0 v/ns totalpowerdissipation(@tc=25 ) 72 w deratingfactorabove25 0.57 w/ t stg ,t j operatingjunctiontemperature&storagetemperature -55~+150 t l maximumleadtemperatureforsolderingpurpose,1/8fromcase for5seconds. 300 p d i d thermal characteristics /w 62.5 - - thermalresistance,junction-to-ambient r ja /w - 0.5 - thermalresistance,case-to-sink r cs /w 1.73 - - thermalresistance,junction-to-case r jc max typ min units value parameter symbol 1/6
samwin SW634 rev0.1 04.10.1 electrical characteristics (tc=25 unless otherwisenoted) value symbol parameter test conditions min typ max off characteristics bv dss drain-source breakdownvoltage v gs =0v,i d =250ua 250 - - v bv dss / tj breakdown voltagetemperature coefficient i d =250ua,referenced to 25 - 0.544 - v/ v ds =250v, v gs =0v i dss drain-source leakagecurrent v ds =200v, tc=125 -- 1 ua gate-source leakagecurrent v gs =30v,v ds =0v - - 100 na gate-source leakagereverse v gs =-30v, v ds =0v - - -100 na on characteristics v gs (th) gate thresholdvoltage v ds =v gs ,i d =250ua 2.0 - 4.0 v r ds(on) static drain-sourceon-state resistance v gs =10v,i d =4.0a - - 0.45 ohm dynamic characteristics ciss input capacitance - - 1220 coss output capacitance - - 130 crss reverse transfercapacitance - - 32 dynamic characteristics t d(on) turn-on delaytime - - 38 t r rise time - - 38 t d(off) turn-off delay time - - 150 t f fall time - - 80 q g total gatecharge - 28 36 q gs gate-source charge - 5 - q gd gate-drain charge (miller charge) - 10 - nc v ds =200v,v gs =10v, i d =8.5a (note4,5) ns v dd =125v,i d =8.5a r g =50ohm (note4,5) pf v gs =0v,v ds =25v, f=1mhz i gss units source-drain diode ratings and characteristics uc - 0.85 - reverse recovery charge q rr ns - 170 - i s =8.5a,v gs =0v, di f /dt=100a/us reverse recovery time t rr v 1.5 - - i s =8.5a,v gs =0v diode forward voltage v sd 34 - - pulsed sourcecurrent i sm a 8.5 - - integral reverse p-n junction diode in themosfet continuous source current i s unit. max. typ. min. test conditions parameter symbol g s d s notes 1. repeativity rating:pulse width limitedby junction temperature 2. l=5.6mh,i as =8.5a,v dd =50v,rg=0ohm, starting tj=25 3. i sd 8.5a,di/dt 100a/us,v dd bv dss , startingtj=25 4. pulsetest: pulsewidth 300us,duty cycle 2% 5. essentiallyindependent of operating temperature. 2/6
samwin SW634 rev0.1 04.10.1 fig1. on-state characteristics fig 3. on resistance variation vs. drain currentand gate voltage fig 4.on state currentvs. allowable case temperature fig 2. transfer characteristics fig 6. gatecharge characteristics fig 5. capacitance characteristics (non-repetitive) 10 -1 10 0 10 1 10 -1 10 0 10 1 4.5v v gs top: 15v 10v 9v 8v 7v 6v 5.5v 5v bottom:4.5v v ds ,drain-to-source voltage[v] 02 46 8 10 12 14 16 0.00 0.25 0.50 0.75 1.00 v gs =10v v gs =20v i d , drain current[a]] 150 25 0 5 10 15 20 25 0 2 4 6 8 10 12 q g ,total gate charge [nc] v ds =200v v ds =125v v ds =50v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 note: 1.v gs =0v 2.250us test v sd ,source-drain voltage[v] 3/6
samwin SW634 rev0.1 04.10.1 fig 7. breakdown voltagevariation vs. junction temperature fig 8.on-resistance variation vs. junction temperature fig 11. transient thermal response curve fig 10. maximum draincurrent vs. case temperature fig9. maximum safeoperating 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 i d , d r a i n c u r r e n t [ a ] t c ,case temperature [ o c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 note: 1.tc=25 c 2.tj=150 c 3.single pulse 10ms 1ms 100us 10us v d ,drain-source voltage[v] i d , d r a i n c u r r e n t [ a ] operation in this area limted by r ds(on) -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 note: 1.v gs =10v 2.i d =4a r d s ( o n ) ( n o r m a l i z e d ) d r a i n t o s o u r c e o n r e s i s t a n c e t j ,junction temperature[ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 note: 1.v gs =0v 2.i d =250u a t j ,junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 d=0.5 0.2 0.1 0.01 0.02 0.05 note: 1.z jc (t)=1.73 o c/w max 2.duty factor,d=t1/t2 3.tj-tc=p dm * z jc (t) single pulse t 1 ,square wave pulse duration (sec) 4/6
samwin SW634 rev0.1 04.10.1 time v ds (t) q gd q gs v gs 10v charge q g dut 1ma same type as dut 200nf 50k 300nf v gs v ds fig 12.gatecharge testcircuit & waveforms fig 14. unclampedinductiveswitchingtest circuit & waveforms fig 13.switching testcircuit & waveforms v dd (0.5 rated v ds ) v ds v in 90% 10% t d(on) t r t on t d(off) t f t off v ds 10v r g dut r l pulse generator v dd t p v ds l r g dut 10v bv dss i as i d (t) v dd eas= ---l l i as 2 --------------- bv dss bv dss -v dd 1 2 5/6
samwin SW634 rev0.1 04.10.1 fig 15. peakdiode recovery dv/dttest circuit & waveforms v dd dut v ds + __ driver l same type as dut r g dv/dt controlled by r g is controlledby pulse period v gs v gs (driver) i s (dut) v ds (dut) i fm ,body diode forward current i rm di/dt body diode reverse current body diode recovery dv/dt v f body diode forward voltage drop gate pulse width gate pulseperiod d = --------------------------- 10v v dd 6/6
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